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| 2014. 3. 31 1/2 semiconductor technical data KDZ100VW revision no : 2 el driver system application.features h small package : usc h sharp breakdown characteristic. h normal voltage tolerance about ? 5.0% maximum rating (ta=25 ? ) usc dim millimeters a bc d e f gh j k 2.50 0.1 1.25 0.050.90 0.05 0.30+0.06/-0.04 1.70 0.05 min 0.17 0.126 0.03 0~0.1 0.15 0.05 0.4 0.05 2 +4/-2 l m4 ~ 6 i 1.0 max m m i c j g d 2 1 b 1. cathode2. cathode e k a f h l + _ + _ + _ + _ + _ + _ + _ bi-directional zener diode silicon epitaxial planar diode characteristic symbol rating unit power dissipation p d * 200 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? operating temperature t opr -55 q 150 ? marking 21 21 aw type name lot no. electrical characteristics (ta=25 ? ) * mounted on a glass epoxy circuit board of 20 ? 20 x , pad dimension of 4 ? 4 x . characteristic symbol test condition min. typ. max. unit zener voltage (note1) v z i z =1ma 95. 0 - 105. 0 v dynamic impedan (note2) z z i z =1ma - - 700 ? reverse current i r v r =76v - - 0.2 a (note 1) v z is tested with pulsed (40ms) (note 2) v z is measured at i z by given a very small a.c current signal. downloaded from: http:///
2014. 3. 31 2/2 KDZ100VW revision no : 2 power dissipation p (mw) zener current i (a) z zener voltage v (v) z ambient temperature ta ( c) i - v zz p - ta 0 0 50 25 75 100 125 150 30 0 1 10 100 1m 10m 60 90 120 1n 10n 100n 50 100 200150 250 ta=25 ctyp. * mounted on a glass epoxy circuit boardof 20 x 20mm pad dimension of 4 x 4mm downloaded from: http:/// |
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